1 - 4 ? 2000 ixys all rights reserved c (tab) g c e g = gate, c = collector, e = emitter, tab = collector to-247 ad (ixgh) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 600 v v ge(th) i c = 250 a, v ce = v ge 2.5 5.0 v i ces v ce = 0.8 ? v ces t j = 25 c 200 a v ge = 0 v t j = 125 c1ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v 1.7 2.0 v 96533b (7/99) symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c40a i c90 t c = 90 c20a i cm t c = 25 c, 1 ms 80 a ssoa v ge = 15 v, t vj = 125 c, r g = 22 i cm = 40 a (rbsoa) clamped inductive load, l = 100 h @ 0.8 v ces p c t c = 25 c 150 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead and tab temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s m d mounting torque, to-247 ad 1.13/10 nm/lb.in. weight to-247 6 g to-268 4 g preliminary data sheet hiperfast tm igbt features international standard packages jedec to-268 surface mountable and jedec to-247 ad high current handling capability latest generation hdmos tm process mos gate turn-on - drive simplicity applications ac motor speed control dc servo and robot drives dc choppers uninterruptible power supplies (ups) switched-mode and resonant-mode power supplies advantages space savings (two devices in one package) high power density suitable for surface mounting switching speed for high frequency applications easy to mount with 1 screw,to-247 (isolated mounting screw hole) ixgh 20n60b ixgt 20n60b to-268 (d3) (ixgt) (tab) g e v ces = 600 v i c25 = 40 a v ce(sat)typ = 1.7 v t fi(typ) = 100 ns ixys reserves the right to change limits, test conditions, and dimensions. .com .com .com
2 - 4 ? 2000 ixys all rights reserved inductive load, t j = 25 c i c = i c90 , v ge = 15 v, l = 100 h, v ce = 0.8 v ces , r g = r off = 10 inductive load, t j = 125 c i c = i c90 , v ge = 15 v, l = 100 h v ce = 0.8 v ces , r g = r off = 10 note 1 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 9 17 s pulse test, t 300 s, duty cycle 2 % c ies 1500 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 175 pf c res 40 pf q g 90 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 11 nc q gc 30 nc t d(on) 15 ns t ri 35 ns e on 0.15 mj t d(off) 150 200 ns t fi 100 150 ns e off note 1 0.7 1.0 mj t d(on) 15 ns t ri 35 ns e on 0.15 mj t d(off) 220 ns t fi 140 ns e off 1.2 mj r thjc 0.83 k/w r thck 0.25 k/w note 1: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g ixgh 20n60b ixgt 20n60b to-247 ad (ixgh) outline dim. millimeter inches min. max. min. max. a 19.81 20.32 0.780 0.800 b 20.80 21.46 0.819 0.845 c 15.75 16.26 0.610 0.640 d 3.55 3.65 0.140 0.144 e 4.32 5.49 0.170 0.216 f 5.4 6.2 0.212 0.244 g 1.65 2.13 0.065 0.084 h - 4.5 - 0.177 j 1.0 1.4 0.040 0.055 k 10.8 11.0 0.426 0.433 l 4.7 5.3 0.185 0.209 m 0.4 0.8 0.016 0.031 n 1.5 2.49 0.087 0.102 dim. millimeter inches min. max. min. max. a 4.9 5.1 .193 .201 a 1 2.7 2.9 .106 .114 a 2 .02 .25 .001 .010 b 1.15 1.45 .045 .057 b 2 1.9 2.1 .75 .83 c .4 .65 .016 .026 d 13.80 14.00 .543 .551 e 15.85 16.05 .624 .632 e 1 13.3 13.6 .524 .535 e 5.45 bsc .215 bsc h 18.70 19.10 .736 .752 l 2.40 2.70 .094 .106 l1 1.20 1.40 .047 .055 l2 1.00 1.15 .039 .045 l3 0.25 bsc .010 bsc l4 3.80 4.10 .150 .161 to-268aa (d 3 pak) min. recommended footprint ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 .com .com .com .com
3 - 4 ? 2000 ixys all rights reserved v ce - volts 012345 i c - am eres 0 20 40 60 80 100 v ce -volts 0 5 10 15 20 25 30 35 40 capacitance - pf 10 100 1000 t j - degrees c 25 50 75 100 125 150 v ce (sat) - normalized 0.50 0.75 1.00 1.25 1.50 1.75 v ce - volts 012345 i c - amperes 0 20 40 60 80 100 v ge - volts 345678910 i c - amperes 0 20 40 60 80 100 v ce - volts 0246810 i c - amperes 0 40 80 120 160 200 13v 11v 9v 7v v ce = 10v v ge = 15v 13v 11v t j = 25 c v ge = 15v t j = 25 c i c = 10a i c = 20a i c = 40a t j = 125 c f = 1mhz 5v 5v v ge = 15v t j = 25 c t j = 125 c 7v 9v 5v 9v v ge = 15v 13v 11v c iss c oss c rss 7v 4000 ixgh 20n60b ixgt 20n60b fig. 1. output characteristics fig. 2. extended output characteristics fig. 3. high temperature output characteristics fig. 4. temperature dependence of v ce(sat) fig. 5. admittance curves fig. 6. capacitance curves .com .com .com .com
4 - 4 ? 2000 ixys all rights reserved pulse width - seconds 0.00001 0.0001 0.001 0.01 0.1 1 z thjc (k/w) 0.001 0.01 0.1 1 d=0.2 v ce - volts 0 100 200 300 400 500 600 i c - amperes 0.1 1 10 100 q g - nanocoulombs 0 20406080100 v ge - volts 0 3 6 9 12 15 r g - ohms 0 102030405060 e (off) - millijoules 0 2 4 6 8 e (on) - millijoules 0 1 2 3 4 i c - amperes 0 1020304050 e (off) - millijoules 0 1 2 3 4 5 6 e (on) - millijoules 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v ce = 300v i c = 10a i c = 20a e (on) e (off) t j = -55 to +125c r g = 4.7 dv/dt < 5v/ns d=0.5 d=0.1 d=0.05 d=0.02 d=0.01 single pulse d = duty cycle r g = 10 t j = 125c 40 e (on) i c =40a e (off) t j = 125c e (on) i c = 20a e (on) e (off) e (off) fig. 7. dependence of e on and e off on i c . fig. 8. dependence of e on and e off on r g . fig. 9. gate charge fig. 10. turn-off safe operating area fig. 11. igbt transient thermal resistance junction-to-case ixgh 20n60b ixgt 20n60b .com .com .com
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